Electrode effect on resistive switching of Ti-added amorphous SiOx films |
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| Authors: | Li-Ming Chen Chih-Chung Chang Tsung-Shune Chin |
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| Affiliation: | a Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan, ROC
b Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan, ROC |
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| Abstract: | Ti-added amorphous SiOx films were sputter-deposited into stacks of Pt/SiOx/Pt and Cu/SiOx/Pt. Optimally prepared Pt/SiOx/Pt exhibits unipolar resistive switching over 102 cycles, resistance ratio ∼ 103, yet wide voltage distribution (2 ∼ 7 V for SET, 0.5 ∼ 1.5 V for RESET). Cu/SiOx/Pt exhibit similar endurance, resistance ratio up to 107, and SET and RESET voltages reduced to 1.8 ∼ 4.2 V and 0.5 ∼ 1 V, respectively. Cu diffusion into SiOx at the virgin state may play a role in resistive switching of Cu/SiOx/Pt stack besides of filament conduction. Ti-added amorphous SiOx films incorporating Cu electrode shows potential for resistive memory. |
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| Keywords: | Amorphous SiOx Ti-addition Resistive switching Filamentary conduction RRAM |
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