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Evaluation of thin film passivation using inorganic Mg-Zn-F heterointerface for polymer light emitting diode |
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| Authors: | Do-Eok Kim Seok-Min Hong Byong-Wook Shin Se-Hyuk Yeom Dae-Hyuk Kwon Shin-Won Kang |
| Affiliation: | a Center for Functional Device Fusion Platform, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, Daegu 702-701, Republic of Korea b School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, Daegu 702-701, Republic of Korea c Department of Sensor and Display Engineering, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, Daegu 702-701, Republic of Korea d Department of Nano-Science & Technology, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, Daegu 702-701, Republic of Korea e Department of Physics, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, Daegu 702-701, Republic of Korea f School of Electronic Information and Communication Engineering, Kyungil University, 33 Buho-ri, Hayang-eup, Gyeongsan-Si, Gyeongsang buk-do, 712-702, Republic of Korea |
| Abstract: | In this study, we manufactured Mg-Zn-F targets using magnesium fluoride (MgF2) and zinc (Zn). The passivation films were deposited on a poly-ethylenenaphthalate (PEN) substrate using a radio-frequency magnetron sputter. The thickness of the manufactured passivation film was 120 nm. Among the three targets tested, the 4:6 weight target of MgF2 to Zn resulted in films with the highest Zn content that would increase the packing density of the thin film. The water vapor transmission rate of a 120 nm Mg-Zn-F film prepared from this target and inserted between two 40 nm MgF2 interlayers on PEN was 2.9 × 10− 2 g/(m2 day) at a relative humidity of 90% and a temperature 38 °C. Its optical transmittance was approximately 80%. |
| Keywords: | Passivation Fluoride |
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