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Raman study of stress effect on Ge nanocrystals embedded in Al2O3 |
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| Authors: | S.R.C. Pinto A. Chahboun R.J. Kashtiban M.J.M. Gomes |
| Affiliation: | a Physics Department, University of Minho, 4710-057 Braga, Portugal b LPS, Physics Department, Faculty of Sciences, BP 1796, FES, Morocco c Nanostructured Materials Research Group, School of Materials, The University of Manchester, PO 88, Manchester, M17HS, UK |
| Abstract: | Ge nanocrystals (NCs) embedded in Al2O3 were grown by RF-sputtering. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy techniques were used to characterize the stresses on the NCs. While small NCs (< 10 nm) have been observed to be spherical and fully relaxed in the matrix, the larger ones (> 17 nm) demonstrated a compressive stress effect. This could be linked to the crystal structure of the adjacent Al2O3 matrix. |
| Keywords: | Germanium Aluminium oxide Nanocrystals Stress Raman spectroscopy Transmission electron microscopy |
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