Characterization of boron-doped diamond-like carbon prepared by radio frequency sputtering |
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Authors: | Jui-Chen Pu Chia-Lun Lin |
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Affiliation: | a Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan, ROCb KINIK Company, Taipei, Taiwan, ROC |
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Abstract: | Instead of the sophisticated deposition processes and boron sources reported in literature, the study used the radio frequency magnetron sputtering method to prepare boron-doped diamond-like carbon (DLC) films with p-type conduction. The adopted sputtering targets were composed of boron pellets buried in a graphite disc. The undoped DLC films prepared exhibited n-type conduction, based on the Hall-effect measurement. For boron content ≥ 2.51 at.%, the films showed semiconductor behavior converted from n-type to p-type conduction after annealing at 450 °C. B-DLC films with a boron content of 5.91 at.% showed a maximum carrier concentration of 1.2 × 1019 cm−3, a mobility of 0.4 cm2/V s, and an electrical resistivity of 1.8 Ω cm. The results of XPS and Raman spectra indicated that the motion of boron atoms was thermally activated during post-annealing, helping promote the formation of C-B bonds in the films. Moreover, the doping of boron in DLC films decreased sp3 bonding and facilitated carbon atoms to form sp2 bonding and graphitization. |
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Keywords: | Diamond-like carbon Boron doping Sputtering Hall-effect measurements Infrared Raman spectroscopy |
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