Optical and structural properties of SiOx films from ion-assisted deposition |
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Authors: | Cheng-Chung Lee Shih-Liang Ku |
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Affiliation: | Thin Film Technology Center/Department of Optics and Photonics, National Central University, Chung-Li, 320, Taiwan |
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Abstract: | This study investigates the optical and structural properties of SiOx (x ∼ 1) films prepared by an ion-assisted deposition (IAD) process. The films were prepared by evaporating silicon monoxide, with and without simultaneous Ar+ bombardment. The stoichiometry of each film was determined as measured by the infrared spectrometry and X-ray photoelectron spectrometry. The variation in the stoichiometry revealed that the oxygen content of the SiOx thin films varied slightly under the different conditions of the Ar+ bombardment. The results of the X-ray diffraction and transmission electron microscopy (TEM) measurements illustrated that all of the films had amorphous structures. However, a different interfacial appearance between the film and the substrate was observed from the TEM image. The optical constants of the SiOx thin films were determined by a spectroscopic ellipsometry. The extinction coefficient of all of the films approached zero in the infrared wavelength range from 2 to 7 μm, but the refractive index was varied by the IAD process. The variation of these refractive indices is mainly related to the packing density of the films. |
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Keywords: | Optical properties Structural properties Ion-assisted deposition Refractive index |
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