Optical and electrical properties of ZnO films, codoped with Al and Ga deposited at room temperature by an RF sputtering method |
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Authors: | Jong-Pil Kim Jong-Seong Bae Tae-Eun Hong Mi-Sook Won Jang-Hee Yoon Byoung-Seob Lee Haeng-Jung Lee |
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Affiliation: | Surface Properties Research Team, Korea Basic Science Institute Busan Center, Busan 609-735, South Korea |
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Abstract: | ZnO thin films, codoped with Al and Ga, were prepared on fused quartz (FQ) and cyclo-olefin polymer (COP) substrates using a radial frequency magnetron sputtering technique at room temperature, without the introducing of oxygen. The elemental distributions of Al, Ga, Zn and O throughout the films were found and no compositional variation in working pressure was observed. A resistivity of 0.03-4.07 Ω cm in AGZ/FQ films (Fig. 2b and 0.04-5.73 Ω cm in AGZ/COP films as well as a transmittance of above 85% were obtained by appropriate control of the working pressure. Compared with the band gap energy of single crystal ZnO, the band gap energy of the AGZ/FQ thin film was somewhat higher. The band gap energy of the AGZ/FQ films showed a tendency to increase with the working pressure employed. |
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Keywords: | Codoping Al and Ga-doped ZnO Band gap energy Working pressure Resistivity |
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