Deep level transient spectroscopy on charge traps in high-k ZrO2 |
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Authors: | Hua-Min Li |
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Affiliation: | SKKU Advanced Institute of Nano-Technology, Sungkyunkwan University, Suwon 440-746, Republic of Korea |
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Abstract: | The deep trap properties of high-dielectric-constant (k) ZrO2 thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO2 dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10− 16 cm2 and ∼ 1.0 × 1016 cm− 3, respectively. DLTS of ZrO2 dielectrics can be used to examine the threshold voltage shift (?Vth) during the operation of SONOS-type flash memory devices, which employ high-k materials. |
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Keywords: | DLTS High-k ZrO2 Deep traps Trap depth Cross section |
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