Transparent, amorphous and organics-free ZnO thin films produced by chemical solution deposition at 150 °C |
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Authors: | J Tellier B Mali? M Škarabot G Gonçalves M Kosec |
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Affiliation: | a Jo?ef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia b CEMOP Uninova, CEMAT I3N, FCT-UNL, Caparica 2829-516, Portugal |
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Abstract: | We have studied the low-temperature processing of ZnO by chemical solution deposition. A transparent, stable precursor solution prepared from zinc acetate dihydrate dissolved in 2-methoxyethanol was spin-coated on SiOx/Si, soda-lime glass and polymer substrates and heated at 150 °C. Selected thin films deposited on SiOx/Si were additionally heated at 450 °C.Microstructural and chemical analyses showed that the thin films heated at 150 °C in air were amorphous, contained no organic residues and had a root mean square roughness of 0.7 nm. The films deposited on SiOx/Si and heated at 450 °C were crystallised and consisted of randomly oriented grains with a diameter of about 20 nm. All thin films were transparent, exhibiting a transmission of over 80% in the visible range. The resistivity of the 120-nm thick ZnO films processed at 150 °C was 57 MΩ cm and upon heating at 450 °C it decreased to 1.9 kΩ cm. |
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Keywords: | Zinc oxide Chemical solution deposition Amorphous materials Resistivity Thin film transistor Transparent electronics |
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