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Fully dense, non-faceted 111-textured high power impulse magnetron sputtering TiN films grown in the absence of substrate heating and bias |
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| Authors: | M. Lattemann U. Helmersson |
| Affiliation: | a Joint Research Laboratory Nanomaterials, Technical University Darmstadt & Karlsruhe Institute of Technology (KIT), 64287 Darmstadt, Germany b Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Postfach 3640, 76021 Karlsruhe, Germany c Plasma & Coatings Physics Division, IFM Material Physics, Linköping University, SE-581 83 Linköping, Sweden d Department of Materials Science, University of Illinois, Urbana, Illinois 61801, USA e Department of Physics, University of Illinois, Urbana, Illinois 61801, USA f The Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA |
| Abstract: | We demonstrate the deposition of fully dense, stoichiometric TiN films on amorphous SiO2 by reactive high power impulse magnetron sputtering (HiPIMS) in the absence of both substrate heating and applied bias. Contrary to the highly underdense layers obtained by reactive dc magnetron sputtering (dcMS) under similar conditions, the film nanostructure exhibits neither intra- nor intergrain porosity, exhibiting a strong 111 preferred orientation with flat surfaces. Competitive grain growth occurs only during the early stages of deposition (< 100 nm). The strong differences in the kinetically-limited nanostructural evolution for HiPIMS vs. dcMS are explained by high real-time deposition rates with long relaxation times, high ionization probabilities for Ti, and broad ion energy distributions. |
| Keywords: | Pulsed magnetron sputtering High power impulse magnetron sputtering (HiPIMS) High power pulsed magnetron sputtering (HPPMS) Titanium nitride Transmission electron microscopy Thin films Nucleation and growth Ion-assisted deposition |
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