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Non-catalytic growth of graphene-like thin film near pattern edges fabricated on SiO2 substrates |
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| Authors: | Satoru Suzuki Yoshihiro Kobayashi Tomoyuki Mizuno |
| Affiliation: | a NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198, Japan b Department of Integrated Design Engineering, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-8522, Japan |
| Abstract: | Graphene-like thin films were grown on patterned SiO2 substrates by simple thermal chemical vapor deposition using ethanol. The film growth occurred preferentially in the vicinity of pattern edges. Catalytic metal is not necessary for the substrate or the pattern. The films consist of graphitic nanocrystals of several nanometer scale. In the electric properties, the field effect is observed at room temperature. |
| Keywords: | Carbon Chemical vapor deposition Raman scattering Electrical properties and measurements Scanning electron microscopy |
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