Epitaxial growth of Cr2O3 thin film on Al2O3 (0001) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing |
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| Authors: | Sang-Yong Jeong Hyunseok Na |
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| Affiliation: | a Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea
b Department of Advanced Materials Science and Engineering, Daejin University, Gyeonggi 487-711, South Korea |
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| Abstract: | We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD Φ-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3 nm. |
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| Keywords: | Chromium Oxide Epitaxial growth Radio frequency magnetron sputtering X-ray diffraction |
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