Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium |
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| Authors: | J.D. Hwang D.S. Lin W.T. Chang |
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| Affiliation: | a Department of Electrical Engineering, Da-Yeh University, Da-Tsuen, Changhua 510, Taiwan, ROCb Department of Electronic Engineering, Chung Chou Institute of Technology, Yuan-Lin, Changhua 510, Taiwan, ROCc Department of Electrophysics, National Chiayi University, ChiaYi 600, Taiwan, ROC |
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| Abstract: | After depositing silicon-dioxide (SiO2) on a geranium (Ge) substrate at room temperature using a liquid-phase deposition (LPD) method, fabricated metal-oxide-semiconductor (MOS) capacitors were used to extract the passivating properties of LPD-SiO2 on the surface. The procedure employed X-ray photoelectron spectroscopy, current-voltage and capacitance-voltage measurements. Our observation shows that (NH4)2S treatment completely removes the native oxide (GeO2) from the Ge surface and passivate surface dangling bond. Hence, the (NH4)2S treated MOS capacitor reveals a lower leakage current than an untreated capacitor by one order. Different temperatures (200-400 °C) for annealing were proposed to improve the passivating properties of LPD-SiO2. With increasing annealing temperature, flat-band voltage shift, fixed oxide-charge density, and interface trap density significantly decrease. Such a result indicates that the LPD-SiO2 and (NH4)2S treatment qualifies as a potential candidate in passivating the Ge substrate. |
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| Keywords: | Liquid-phase deposition Metal-oxide-semiconductor Germanium Fixed oxide-charge density Interface trap density X-ray photoelectron spectroscopy |
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