Growth of ZnO/sapphire heteroepitaxial thin films by radio-frequency sputtering with a raw powder target |
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Authors: | S.H. Seo |
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Affiliation: | a Advanced Materials and Application Research Division, Korea Electrotechnology Research Institute, Changwon 641-120, Republic of Korea b Department of Advanced Materials Engineering and BK21 Education Center of Mould Technology for Advanced Materials and Parts, College of Engineering, Chosun University, Gwangju 501-759, Republic of Korea |
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Abstract: | Epitaxial ZnO thin films were deposited by radio-frequency sputtering. In contrast to typical sputter growth, in which a ZnO sintered target was used, raw ZnO powder with a particle size smaller than 1 μm is used as the source material. In order to verify this approach, ZnO thin films were deposited on sapphire(0001) substrates and characterized by X-ray diffraction, atomic force microscopy, ultraviolet-visible-near-infrared (near-IR) transmission spectroscopy, and photoluminescence spectroscopy. The as-deposited ZnO thin films grew epitaxially on the sapphire(0001) substrate. A crossover in the growth mode from an initial 2-dimensional planar layer to later 3-dimensional islands was observed, which is consistent with the results obtained using a ZnO sintered target. The ZnO films showed band-edge emission with a bandgap energy of 3.27 eV and a high optical transmittance > 80% from visible to near-IR region. This shows that ZnO powder targets can be an alternative to relatively expensive sintered ones in the fabrication of ZnO nano-structures and doped ZnO. |
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Keywords: | Zinc oxide Radio-frequency sputtering Heteroepitaxy Thin films Powder target X-ray diffraction Optical properties |
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