Nanocone SiGe antireflective thin films fabricated by ultrahigh-vacuum chemical vapor deposition with in situ annealing |
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Authors: | Yuan-Ming Chang Tsung-Chieh Cheng |
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Affiliation: | a Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan, ROC b Department of Mechanical Engineering, National Kaohsiung University of Applied Science, Kaohsiung, 415 Taiwan, ROC c Department of Mechanical Engineering, National Chiao Tung University, Hsinchu, 300 Taiwan, ROC |
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Abstract: | In this study, we fabricated nanocone-presenting SiGe antireflection layers using only ultrahigh-vacuum chemical vapor deposition. In situ thermal annealing was adopted to cause SiGe clustering, yielding a characteristic nanocone array on the SiGe surface. Atomic force microscopy indicated that the SiGe nanocones had uniform height and distribution. Spectrophotometric measurements revealed that annealing at 900 °C yielded SiGe thin films possessing superior antireflective properties relative to those of the as-grown SiGe sample. We attribute this decrease in reflectance to the presence of the nanostructured cones. Prior to heat treatment, the mean reflectance of ultraviolet rays (wavelength < 400 nm) of the SiGe thin film was ca. 61.7%; it reduced significantly to less than 28.5% when the SiGe thin film was annealed at 900 °C. Thus, the drop in reflectance of the SiGe thin film after thermal treatment exceeded 33%. |
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Keywords: | SiGe Thin films Annealing Nanostructures Antireflective layer Atomic force microscopy |
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