Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications |
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Authors: | M Colina C Molpeceres J Gandia JL Ocaña |
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Affiliation: | a Centro Láser UPM, Univ. Politécnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid, Spain b Dept. de Energías Renovables, Energía Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid, Spain c CeRMAE Dept. Física Aplicada i Òptica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona, Spain |
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Abstract: | Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared-Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove. |
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Keywords: | Hydrogenated amorphous silicon Thin films Laser scribing Solar cells IR-VIS spectroscopy Raman spectroscopy |
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