Synthesis of epitaxial BaZrO3 thin films by chemical solution deposition |
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Authors: | R.B. Mos M.S. Gabor T. Petrisor Jr. A Rufoloni T. Petrisor |
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Affiliation: | a Technical University of Cluj, 15, C. Daicoviciu Street, 400020 Cluj-Napoca, Romania b ENEA Frascati, Via Enrico Fermi 45, 00044, Frascati, Roma, Italy |
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Abstract: | This work reports on the low temperature preparation and characterization of BaZrO3 (BZO) epitaxial thin films by chemical solution deposition (CSD). The X-ray θ-2θ scan and φ-scan measurements have demonstrated that the BZO films exhibit cube-on-cube epitaxy on (100) MgO substrates, with the full width at half maximum (FWHM) for the ω-scan and φ-scan of 0.35° and 0.46°, respectively. The SEM and AFM analyses revealed that the morphology of the films is strongly correlated with annealing temperature. The root mean square roughness for the film annealed at 600 °C is 3.63 nm, while for the film grown at 1000 °C is 5.25 nm. |
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Keywords: | Barium zirconate Thin films Chemical solution deposition |
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