Influence of working pressure on ZnO:Al films from tube targets for silicon thin film solar cells |
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Authors: | H Zhu J Hüpkes A Gerber |
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Affiliation: | a Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, 200062 Shanghai, PR China b Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany |
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Abstract: | Mid-frequency magnetron sputtering of aluminum doped zinc oxide films (ZnO:Al) from tube ceramic targets has been investigated for silicon based thin film solar cell applications. The influence of working pressure on structural, electrical, and optical properties of sputtered ZnO:Al films was studied. ZnO:Al thin films with a minimum resistivity of 3.4 × 10−4 Ω cm, high mobility of 50 cm²/Vs, and high optical transmission close to 90% in visible spectrum region were achieved. The surface texture of ZnO:Al films after a chemical etching step was investigated. A gradual increase in feature sizes (diameter and depth) was observed with increasing sputter pressure. Silicon based thin film solar cells were prepared using the etched ZnO:Al films as front contacts. Energy conversion efficiencies of up to 10.2% were obtained for amorphous/microcrystalline silicon tandem solar cells. |
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Keywords: | Magnetron sputtering ZnO:Al films Thin film silicon solar cells |
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