Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator |
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| Authors: | L Zhang H Zhang XW Zhang ZL Zhang |
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| Affiliation: | a Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, PR China
b Department of Materials science, Shanghai University, Shanghai 200072, PR China |
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| Abstract: | Top-contact Copper phthalocyanine (CuPc) thin-film field-effect transistor (TFT) with SiO2/Ta2O5/SiO2 (STS) multilayer as the dielectric was fabricated and investigated. With the multi-layer dielectric, drive voltage was remarkably reduced. A relatively large on-current of 1.1 × 10−7 A at a VGS of −15 V was obtained due to the strong coupling capability provided by the STS multilayer gate insulator. The device shows a moderate performance: saturation mobility of μsat = 6.12 × 10−4 cm2/V s, on-current to off-current ratio of Ion/Ioff = 1.1 × 103, threshold voltage of VTH = −3.2 V and sub-threshold swing SS = 1.6 V/dec. Atomic force microscope images show that the STS multilayer has a relative smooth surface. Experiment results indicate that STS multilayer is a promising insulator for the low drive voltage CuPc-based TFTs. |
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| Keywords: | Tantalum oxide Zinc oxide Multilayers Organic thin film transistors |
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