Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates |
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Authors: | D Lysá?ek L Válek J Spousta |
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Affiliation: | a ON Semiconductor Czech Republic, 1. máje 2230, 756 61 Ro?nov p. Radhoštěm, Czech Republic b Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic |
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Abstract: | The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 °C was found to be stable upon annealing at temperatures lower than about 900 °C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 °C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycrystalline layer. |
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Keywords: | Chemical vapor deposition Structural properties Polycrystalline silicon Recrystallization Grain growth |
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