Photoconductive and photovoltaic evaluation of In2O3-SnO2 multilayered thin-films deposited on silicon by reactive pulsed laser ablation

In₂O₃ and SnO₂ multilayered semiconducting thin-films have been deposited on Si substrates by reactive pulsed laser ablation (RPLA), with the aim of evaluating their photoconductive and photovoltaic properties. A photo-stimulated electrical study has been performed on the films as a function of oxygen pressure during the deposition process and compared to their microstructure. Temperature-dependent resistivity measurements have been performed to determine the charge carrier transport mechanisms. The experimental demonstration of active photogeneration has been achieved and the influence of deposition parameters on the film structural properties has been correlated to the photovoltaic performance (open-circuit voltage, short-circuit current and output power).