The effects of low temperature buffer layer on the growth of pure Ge on Si(001) |
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Authors: | Keun Wook Shin Jungsub Kim Sangsoo Lee |
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Affiliation: | a Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea b Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270, Republic of Korea |
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Abstract: | We investigated the effects of low temperature (LT) Ge buffer layers on the two-step Ge growth by varying the thickness of buffer layers. Whereas the two-step Ge layers using thin (< 40 nm) Ge buffer layers were roughened due to the formation of SiGe alloy, pure and flat Ge layers were grown by using thick (> 50 nm) LT Ge buffer layers. The lowest threading dislocation density of 1.2 × 106 cm−2 was obtained when 80-nm-thick LT Ge buffer layer was used. We concluded that the minimum thickness of buffer layer was required to grow uniform two-step Ge layers on Si and its quality was subject to the thickness of buffer layer. |
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Keywords: | Germanium UHVCVD Two step growth Thickness Low temperature |
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