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| Ka波段低相位噪声GaAs MHEMT单片压控振荡器 | |
| 引用本文： | 王维波,王志功,张斌,康耀辉,吴礼群,杨乃彬. Ka波段低相位噪声GaAs MHEMT单片压控振荡器[J]. 固体电子学研究与进展, 2009, 29(3) |
| 作者姓名： | 王维波 王志功 张斌 康耀辉 吴礼群 杨乃彬 |
| 作者单位： | 1. 东南大学射频与光电集成电路研究所,南京,210096;单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所,南京,210016 2. 东南大学射频与光电集成电路研究所,南京,210096 3. 单片集成电路与模块国家重点实验室,南京,210016;南京电子器件研究所,南京,210016 4. 单片集成电路与模块国家重点实验室,南京,210016 5. 南京电子器件研究所,南京,210016 |
| 摘 要： | 报道了一种低相位噪声VCOMMIC芯片,采用传统的源端反馈形成负阻来消除谐振回路中的寄生电阻,通过合理的输出匹配实现起振条件并抑制谐波,利用南京电子器件研究所0.15μmGaAsMHEMT工艺,研制的Ka波段GaAsMHEMT压控振荡器,典型振荡频率为39.34GHz,频率变化范围38.6～41.3GHz之间,调谐带宽2.7GHz,典型输出功率6.97dBm,频偏100kHz,相位噪声为-81.1dBc/Hz。 |
| 关 键 词： | 砷化镓 变性高电子迁移率晶体管 单片压控振荡器 相位噪声 |
A Ka-band GaAs MHEMT VCO MMIC with Low Phase Noise |
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| WANG Weibo,WANG Zhigong,ZHANG Bin,KANG Yaohui,WU Liqun,YANG Naibin. A Ka-band GaAs MHEMT VCO MMIC with Low Phase Noise[J]. Research & Progress of Solid State Electronics, 2009, 29(3) | |
| Authors: | WANG Weibo WANG Zhigong ZHANG Bin KANG Yaohui WU Liqun YANG Naibin |
| Affiliation: | WANG Weibo1,2,3 WANG Zhigong1 ZHANG Bin2,3 KANG Yaohui2WU Liqun3 YANG Naibin2,3(1 Institute of RF-&OE-ICs,Southeast University,Nanjing,210096,CHN)(2 National Key Laboratory of Monolithic Integrated Circuits and Modules,210016,CHN)(3 Nanjing Electronic Devices Institute,CHN) |
| Abstract: | A Ka-band VCO MMIC with low phase noise is reported in this paper.To eliminate the parasitic resistance of the oscillator loop,this chip utilizes the source feedback forming the negative resistance.Through the reasonable output matching network,the chip also realizes the frequency start-up condition and restrains the output harmonic.Finally,fabricated by the NEDI's 0.15 μm GaAs MHEMT technology,the MMIC oscillates at the 39.34 GHz typically and ranges from 38.6 GHz to 41.3 GHz,the voltage controlled bandwidth achieves 2.7 GHz,and the typical output power reaches 6.97 dBm,the phase noise also achieves-81.1 dBc/Hz@100 kHz. |
| Keywords: | GaAs MHEMT VCO MMIC phase noise |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |