| 基于平面肖特基二极管的太赫兹频段倍频器的研究 |
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| 引用本文： | 王培章,张颖松,朱卫刚,晋军. 基于平面肖特基二极管的太赫兹频段倍频器的研究[J]. 微波学报, 2014, 30(S2): 549-552 |
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| 作者姓名： | 王培章 张颖松 朱卫刚 晋军 |
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| 作者单位： | （解放军理工大学通信工程学院，南京210007） |
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| 摘 要： | 基于研究肖特基变容二极管的半导体层结构分析与建模，通过研究太赫兹平面肖特基势全二极管半导体材料的物理层结构，分析二极管结构的电磁效应及其频率响应特性。研究D 频段变容二极管高效率倍频器技术，在太赫兹频段倍频器的性能对整个接收机的性能有着至关重要的影响。要实现高频率，高功率，宽频带，高效率，低噪声太赫兹倍频技术是太赫兹技术领域的核心研究方向之一。研究基肖特基二极管倍频器的关键技术，分析了国内外现状及发展动态。
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| 关 键 词： | 肖特基变容二极；太赫兹；倍频器 |
Research on Microwave and Millimeter Wave FrequencyMultipIying Techniques on the Schottky Diode |
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| WANG Pei-zhang,ZHANG Ying-song,ZHU Wei-gang,JIN Jun. Research on Microwave and Millimeter Wave FrequencyMultipIying Techniques on the Schottky Diode[J]. Journal of Microwaves, 2014, 30(S2): 549-552 |
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| Authors: | WANG Pei-zhang ZHANG Ying-song ZHU Wei-gang JIN Jun |
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| Abstract: | The semiconductor layer structure of schottky varactor diode is analyzed and modeled; the field-circuit couplingmethod is used to study the reciprocity . the frequency response characteristics of diode structure are analyzed, Efficient frequencymultiplier technique for D band varactor diode and the property of terahertz frequency multiplier are crucial . The techniques ofrealizing high frequency, high power, broadband, efficient and low noise terahertz frequency multiplier have been increasinglyinvestigated. simulation of terahertz sub-harmonic frequency synthesizer system, accurately modeling and simulation of planarschottky diode, terahertz schottky diode planner technology. |
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| Keywords: | time domain integral equation plane wave time domain electromagnetic compatibility fast algorithm transient analysis |
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