| 不同激光二极管能量触发下GaAs 光导开关研究 |
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| 引用本文： | 吴朝阳 范昭奇 陆巍 杨周炳. 不同激光二极管能量触发下GaAs 光导开关研究[J]. 微波学报, 2014, 30(S2): 464-467 |
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| 作者姓名： | 吴朝阳 范昭奇 陆巍 杨周炳 |
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| 作者单位： | （中国工程物理研究院 应用电子学研究所 高功率微波技术重点实验室，四川 绵阳 621900） |
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| 基金项目： | 高功率微波技术重点实验室项目（2013HPM-01） |
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| 摘 要： | GaAs 光导开关在较高的场强下可工作于雪崩模式，为此设计了异面体结构的GaAs 光导开关以提高开关场强。设计的开关芯片厚度为2mm，电极间隙为3mm，利用半导体激光二极管对开关进行了触发实验。当开关充电电压超过8kV 后，开关输出脉冲幅度显著增强，输出脉冲前沿快于光脉冲，开关开始了雪崩工作模式，且随着开关电场不断增加，开关输出电压幅值也线性增加。在不同触发能量下，开关输出电压幅值和波形基本没有改变，但在较高的触发能量和高的偏置电场下，开关抖动较小，实验中开关获得的最小抖动约500ps。
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| 关 键 词： | 光导开关；雪崩模式；半导体二极管；触发能量 |
Investigation of GaAs Photoconductive Semiconductor SwitchTriggered by Different Laser Diode Energy |
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| WU Zhao-yang,FAN Zhao-qi,LU Wei,YANG Zhou-bing. Investigation of GaAs Photoconductive Semiconductor SwitchTriggered by Different Laser Diode Energy[J]. Journal of Microwaves, 2014, 30(S2): 464-467 |
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| Authors: | WU Zhao-yang FAN Zhao-qi LU Wei YANG Zhou-bing |
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| Affiliation: | (Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, China) |
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| Abstract: | GaAs PCSS can work on avalanche mode under high electric field , so a vertical GaAs PCSS with bulk structure isfabricated to enhance the switch field. The designed switch has 2mm thickness and 3mm gap, and is triggered by semiconductorlaser diode. When charge voltage exceed 8kV, the output voltage impulse increase rapidly and faster than the laser impulse whichshows PCSS turn into avalanche mode, and along with switch electric field enhance, the output voltage increase linearly.Triggering by different laser diode energy, there are no changing on the output voltage and output waveform, but the switch jitteris lower at higher bias electric field and higher trigger energy, the lowest switch jitter of 500ps is obtained at this experiment. |
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| Keywords: | photoconductive semiconductor switch(PCSS) avalanche mode semiconductor diode trigger energy |
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