A new empirical nonlinear model for HEMT and MESFET devices |
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| Authors: | Angelov I. Zirath H. Rosman N. |
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| Affiliation: | Dept. of Appl. Electron Phys., Chalmers Univ. of Technol., Goteborg; |
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| Abstract: | A large-signal model for HEMTs and MESFETs, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances, is proposed. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different δ-doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled DC and S-parameters are compared and found to coincide well |
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