Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O3 Thin Films Prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition

Polycrystalline Pb(Zr,Ti)O₃ (PZT) films with various film thicknesses were deposited on (111)Ir/TiO₂/SiO₂/Si and (111)Pt/TiO₂/SiO₂/Si substrates at 540°C by source-gas-pulsed metalorganic chemical vapor deposition (pulsed-MOCVD). PZT films deposited on (111)Ir/TiO₂/SiO₂/Si substrates showed good surface flatness and lower leakage current density. The rate of the decrease of remanent polarization (P _r ) and the rate of increase of coercive field (E _c ) for the films with decreasing the film thickness smaller on (111)Ir/TiO₂/SiO₂/Si substrates than those of (111)Pt/TiO₂/SiO₂/Si substrates. In addition, P _r and E _c values saturated at low voltage when the film thickness was the same. As a result, good ferroelectricity with P _r and E _c values of 40 μC/cm² and 140 kV/cm were obtained for 35 nm-thick films prepared on (111)Ir/TiO₂/SiO₂/Si substrates by pulsed-MOCVD.