| 多晶硅薄膜后氢化的研究 |
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| 引用本文： | 耿新华,于振瑞.多晶硅薄膜后氢化的研究[J].光电子技术,1995,15(2):154-154. |
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| 作者姓名： | 耿新华 于振瑞 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所!天津300071(耿新华，孙钟林，徐温元)，天津运输工程学院基础部(于振瑞) |
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| 摘 要： | 本文利用氢气射频等离子体辉光放电技术对ａ－Ｓｉ及ｐｏｌｙ－Ｓｉ薄膜进行了后氢化研究。确定了最佳后氢化处理条件，对后氢化前后材料的电学、光学及电子态等特性进行了测量，分析，结果表明氢气射频等离子体辉光放电技术能明显改善材料的性能，利用后氢化技术对ｐｏｌｙ－Ｓｉ ＴＦＴ器件进行了处理，获得了满意的效果。
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| 关 键 词： | 后氢化 多晶硅 薄膜场效应管 |
Post-Hydrogenation of Poly-Si Thin Films |
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| Geng Xinhua,Yu Zhernirui,Sun Zhonglin, Xu Wenyuan.Post-Hydrogenation of Poly-Si Thin Films[J].Optoelectronic Technology,1995,15(2):154-154. |
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| Authors: | Geng Xinhua Yu Zhernirui Sun Zhonglin Xu Wenyuan |
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| Abstract: | The post-hydrogenation of poly-Si thin films was investigated by using H2 rf plasma technique. The optimum parameters of the post-hydrogenation were determined. The electric and optical properties of the samples before and after hydrogenation were tested and analyzed. Obvious improvement of the sample properties was demonstrated by the treatment. The post-hydrogenation method was applied to the preparation of poly-Si TFTs and good device characteristics were obtained. |
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| Keywords: | post-hydrogenation poly-Si thin film transistors (TFTs) |
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