| 电弧等离子体法制备纳米Ce-NiO的气敏特性 |
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| 引用本文： | 董立峰,宋淑敏,董艳棠,崔作林.电弧等离子体法制备纳米Ce-NiO的气敏特性[J].功能材料,1997(3). |
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| 作者姓名： | 董立峰 宋淑敏 董艳棠 崔作林 |
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| 作者单位： | 青岛化工学院纳米材料研究所 |
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| 摘 要： | 用Ｈ２＋Ａｒ电弧等离子体法制备纳米Ｃｅ－ＮｉＯ并研究其气敏特性。实验结果表明：与通常用作氧敏传感器的Ｐ型ＮｉＯ半导体材料相比，Ｈ２＋Ａｒ电弧等离子体法制备的纳米Ｃｅ－ＮｉＯ气敏材料表现出一定的ｎ型导电性，对乙炔具有很好的选择性和较高的灵敏度；其气敏特性与纳米Ｃｅ－ＮｉＯ晶粒的显微结构有关。
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| 关 键 词： | 电弧等离子体 表面修饰 纳米 NiO 气敏 |
Gas Sensitive Property of Nano Ce NiO Prepared by Arc Plasma Method |
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| Dong Lifeng,Song Shumin,Dong Yantang,Cui Zuolin.Gas Sensitive Property of Nano Ce NiO Prepared by Arc Plasma Method[J].Journal of Functional Materials,1997(3). |
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| Authors: | Dong Lifeng Song Shumin Dong Yantang Cui Zuolin |
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| Abstract: | Nano Ce NiO was prepared by H 2+Ar arc plasma method and its property of gas sensitivity was studied. Compared with NiO,a kind of p type semiconductor usually used for oxygen sensor, nano Ce NiO exhibits certain n type semiconductor feature to some reductive gas at some temperatures. At the same time, the results show that nano Ce NiO has excellent selectivity and good sensitivity to C 2H 2. The mechanism of gas sensitivity of nano Ce NiO is relevant to its microstructure. |
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| Keywords: | arc plasma surface decoration nanometer NiO gas sensitivity |
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