高温氧化协同原位掺硼提升金刚石薄膜的亲水性

用H₂、CH₄和B₂H₆气体作为气源,采用热丝化学气相沉积技术在单晶硅衬底上分别制备纯金刚石膜和含硼金刚石薄膜,然后在600~800℃高温氧化。通过扫描电镜、拉曼光谱及X射线衍射仪对金刚石膜层的形貌和成分进行表征,用常温接触角测试仪对其亲水性进行表征,研究高温氧化协同原位掺硼对金刚石薄膜亲水性的影响。结果表明,随高温氧化温度升高,膜层逐渐被刻蚀至出现微孔形貌,其中纯金刚石膜层在700℃下氧化后,接触角从68.1°降低至21.5°,膜层亲水性提高。随掺硼浓度提高,微孔逐渐消失,在V(H2):V(CH₄):V(B₂H₆)=97:3:0.4条件下制备的掺硼金刚石膜,并在800℃氧化处理后,具有最小接触角14.1°。在原位掺硼和高温氧化的协同作用下,膜层成分发生改变,同时金刚石完美构型出现缺陷,微孔形貌使金刚石膜层的表面能增大,从而有效提高金刚石薄膜的亲水性。

Improving the hydrophilia of diamond film by high temperature oxidation and in situ boron doping

Hot filament chemical vapor deposition(HFCVD)was used to prepare high-quality diamond films and boron doped diamond films on single-crystal silicon substrates by using H₂,CH₄ and B₂H₆ as gas source.After 600?800℃high temperature oxidation treatment,the morphology,composition and hydrophilic of the diamond film were characterized by scanning electron microscope,Raman spectroscopy,X-ray diffraction and normal temperature contact angle instrument.The effects of high temperature oxidation and in-situ boron doping on the hydrophilic of diamond films were also studied.The results show that with the increase of high temperature oxidation temperature,the film was gradually etched to micropore morphology.The contact angle of pure diamond film decreases from 68.1°to 21.5°after oxidation at 700℃,and the hydrophilicity of the film is improved.With the increase of boron concentration,the micropores gradually disappear.The minimum contact angle is 14.1°when the boron-doped diamond film was prepared under the conditions of V(H₂):V(CH4):V(B₂H₆)=97.0:3.0:0.4,and after oxidation at 800℃.Under the synergistic effect of in-situ boron doping and high-temperature oxidation,the composition of the film changes,and the perfect diamond configuration defects appear,as well as the surface energy of diamond film increases due to micropores.This method can effectively improve the hydrophilic of diamond film.