纳米Al2O3强化铜基ODS 20的组织与性能

研究了铜基ODS的组织与性能。结果表明,采用内氧化方法生产的铜基ODS 20,在纯铜基体上原位生成弥散、10nm左右的-γAl2O3微粒。该材料导电率约90%IACS,比纯铜导电率约降低10%。加工状态的室温强度可达到610MPa,在1173K保温1.5h,硬度达到室温硬度的86%,表明软化温度高于1173 K。经1273K+1.5h退火,晶粒平均直径小于1μm,Al2O3微粒不发生熔解、聚集、长大等现象。

Microstructure and Properties of Nanometer Al2O3 Strengthened Cu-based ODS 20

The microstructure and properties of oxide dispersion strengthened copper ODS 20 is investigated in this paper.It is indicated that the Al_2O_3 patricles with a size about 10 nanometer grow in-situ in the copper base in the process of internal oxidation.The conductivity of the material is about 90% IACS or 10% lower than that of pure copper and the strength of the material in room temperature reaches 610MPa.After heating at 1173K for 1.5 hour,the hardness retains 86%,which indicates that the soft point of the material is higher than 1173K and when the material is heated at 1273K for 1.5 hour,the average grain size of the material is smaller than 1μm without the melting,coalescing and growing of the Al_2O_3 particles.