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Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress |
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| Authors: | SW TasoTC Chang MC WangSC Chen J Lu CF WengYF Wei WC WuY Shi |
| Affiliation: | a Department of Photonics, National Sun Yat-sen University, Kaohsiung 804, Taiwan, ROC b Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan, ROC c Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 804, Taiwan, ROC d Physics Division, Institute of Nuclear Energy Research, Taiwan, ROC e Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China |
| Abstract: | This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77 K to 400 K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress. |
| Keywords: | Amorphous silicon thin-film transistors Bending Stress |
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