Characteristics of p-Ge/N-GaAs heterojunctions grown by molecular beam epitaxy |
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| Authors: | Unlu MS Strite S Won T Adomi K Chen J Mohammad SN Biswas D Morkoc H |
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| Affiliation: | Illinois Univ., Urbana, IL, USA; |
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| Abstract: | Reports the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.<> |
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