首页 | 本学科首页   官方微博 | 高级检索  
     

RIBLL大面积真空镀膜装置
引用本文:王猛,陈志强,詹文龙,郭忠言,肖国青,王金川,王全进,李加兴,宁振江,王建松,王建峰,王贵文,周嗣信. RIBLL大面积真空镀膜装置[J]. 核电子学与探测技术, 2001, 21(1): 51-55
作者姓名:王猛  陈志强  詹文龙  郭忠言  肖国青  王金川  王全进  李加兴  宁振江  王建松  王建峰  王贵文  周嗣信
作者单位:中国科学院近代物理研究所, 兰州 730000
基金项目:国家自然科学基金资助!( 10 0 2 196750 55,110 2 197350 10 )
摘    要:描述了一台大面积双叠层阳极在 X、Y方向分条读出气体电离室而发展的大面积真空镀膜装置。镀膜腔体内体积为 990 mm× 780 mm× 780 mm。可镀膜面积最大为 960 mm× 750 mm。用该装置为RIBLL电离室镀阴极、X阳极、Y阳极和窗 ,镀膜面积 4 4 0 mm× 160 mm,Mylar膜厚 3.2 6μm,镀银 97.2 7nm,镀银厚度不均匀度为 18.91%。用它制作的 RIBLL电离室的阳极、阴极 ,当电离室工作气压2 5k Pa P10气体 ,阳极电压 2 2 0 V,阴极电压 - 160 0 V时 ,对 5.15Me Vα源测量能量分辨率为 4 .2 %。

关 键 词:双叠层阳极电离室 分条阳极 厚度不均匀度 真空镀膜装置 兰州放射性离子束流线
文章编号:0258-0934(2001)01-0051-05
修稿时间:1999-10-05

A large area Mylar foil vacuum-silver-plated equipment of RIBLL
WANG Meng,CHEN Zhi qiang,ZHAN Wen long,GUO Zhong yan,XIAO Guo qiang,WANG Jin chuan,WANG Quan jin,LI Jia xing,NING Zheng jiang,WANG Jian song,WANG Jian feng,WANG Gui wen,ZHOU Si xin. A large area Mylar foil vacuum-silver-plated equipment of RIBLL[J]. Nuclear Electronics & Detection Technology, 2001, 21(1): 51-55
Authors:WANG Meng  CHEN Zhi qiang  ZHAN Wen long  GUO Zhong yan  XIAO Guo qiang  WANG Jin chuan  WANG Quan jin  LI Jia xing  NING Zheng jiang  WANG Jian song  WANG Jian feng  WANG Gui wen  ZHOU Si xin
Abstract:A large area vacuum-silver-plated equipment is described. It wassteup in constructing two-fold ionizing chamber with anodes tripped readout of RIBLL. The dimension of vacuum chamber is 990mm×780mm ×780mm. The maximun area of Mylar foil plated is about 960mm×750mm. The cathode, anodes- tipped and windows of two-fold IC had been plated with Ag in this equipment, The area of Mylar foils are 440mm×160mm. Thickness of Mylar is 3.26μm and thickness of Ag-plated is 97.27nm in average. The relative dispersion of thickness in the siver-plated is 18.91%. The IC with cathode and anodes-tripped Ag-plated of RIBLL was measured. When the pressure of P10 operating gas is 25kPa ,the cathode is set at -1600V and the anodes are at 200V, the energy resolution 4.2% for 5. 15MeV α particle is obtained.
Keywords:large area  two fold IC  anodes tripped  dispersion of thicknH
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号