Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon

In this paper, we present our numerical study on FinFET having an isolated n+/p+ gate region strapped with metal and poly-silicon structure. Our theoretical work is based on 2-D quantum-mechanical simulator with a self-consistent solution of Poisson-Schr?dinger equation. Our numerical simulation revealed that the threshold voltage (VT) is controlled within -0.1 approximately +0.2 V with varying the doping concentration of the n+ and p+ polysilicon gate region from 1.0 x 10(17) to 1.0 x 10(18) cm(-3). We also confirmed that the better VT tolerance of the FinFET on the variation of the fin thickness can be expected over the conventional FinFET structure. For instance, the VT of the FinFET under this work exhibited 0.02 V tolerance with respect to the variation of the fin thickness change of 5 nm (from 30 to 35 nm) while the traditional FinFET demonstrates the tolerance of 0.12 V for the same variation of the fin thickness.