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不同浓度添加剂对铜镀层性能的影响
引用本文:GU Xiao-qing,徐赛生. 不同浓度添加剂对铜镀层性能的影响[J]. 中国集成电路, 2008, 17(8): 61-64
作者姓名:GU Xiao-qing  徐赛生
作者单位:复旦大学微电子学系,上海,200433
摘    要:目前,随着集成电路规模的不断发展,传统的铝互连技术已由铜互连技术取代。铜的超填充主要采用Damascene工艺进行电镀。在电镀液中有机添加剂(包括加速剂、抑制剂和平坦剂)虽然含量很少,但对镀层性能的影响至关重要。本文以Enthone公司的ViaForm系列添加剂为例,研究了不同添加剂浓度组合对脉冲铜镀层性能的影响。

关 键 词:铜互连  有机添加剂  脉冲电镀  XRD  电阻率

Different Concentrations of Additives on the Properties of Copper Plating
GU Xiao-qing,XU Sai-sheng. Different Concentrations of Additives on the Properties of Copper Plating[J]. China Integrated Circuit, 2008, 17(8): 61-64
Authors:GU Xiao-qing  XU Sai-sheng
Affiliation:GU Xiao-qing, XU Sai-sheng(1.Shanghai Technical Institute of Electronics & Information,Shanghai 200433,China; 2.School of Microelectronics, Fudan University, Shanghai 200433, China)
Abstract:At present, copper interconnect technology have replaced the traditional aluminum wiring in VLSI interconnection. Copper is filled mainly by the ultra-Damascene process for electroplating. Organic additives, including accelerator, suppressor and leverler, although their concentration in the electroplating solution is very few, but they are crucial for the copper plating process. This paper is about studying of each type of additives' impact on copper plating.
Keywords:copper interconnect  Organic additives  pulse plating  XRD  resistivity
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