| Abstract: | An ultrathin layer of a polymer containing simple aliphatic amine groups, polyethylenimine ethoxylated (PEIE), is deposited on a back‐gated field effect graphene device to form graphene p–n–p junctions. Characteristic I–V curves indicate the superposition of two separate Dirac points, which confirms an energy separation of neutrality points within the complementary regions. This is a simple approach for making graphene p–n–p junctions without a need for multiple lithography steps or electrostatic gates and, unlike, the destructive techniques such as substitutional doping or covalent functionalization, it induces a minor defect, if any, as there is no discernible D peak in the Raman spectra of the graphene films after creating junctions and degradation in the charge carrier mobilities of the graphene devices. This method can be easily processed from dilute solutions in environmentally‐friendly solvents such as water or methoxyethanol and does not suffer any change upon exposure to air or heating at temperatures below 100 °C. |
