High reliability planar-type GaInAs/InP heterostructure avalanchephotodiodes |
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| Authors: | Matsushima Y Akiba S Kushiro Y |
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| Affiliation: | KDD Meguro R&D Labs., Tokyo; |
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| Abstract: | High-temperature, long-term life tests of GaInAs/InP heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted for the first time with an activation energy of 0.7 eV |
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