| 硅中硼离子注入校准样品的研制 |
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| 引用本文： | 刘德中. 硅中硼离子注入校准样品的研制[J]. 微细加工技术, 1991, 0(1): 1-6 |
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| 作者姓名： | 刘德中 |
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| 作者单位： | 上海市测试技术研究所 200233(刘德中，薛正镠，许国桢，朱志敔)，上海市测试技术研究所 200233(陆东元) |
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| 摘 要： | 本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。
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| 关 键 词： | 离子注入 样品 硼 硅 SIMS |
FABRICATION OF CALIBRATION SAMPLES FOR BORON ION IMPLANTATION INTO SILICON |
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| LVU,Dezhong,Xue Zhengmiu,Xu Guozhe,Zhu Ziyu,Lu Dong yuan.. FABRICATION OF CALIBRATION SAMPLES FOR BORON ION IMPLANTATION INTO SILICON[J]. Microfabrication Technology, 1991, 0(1): 1-6 |
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| Authors: | LVU Dezhong Xue Zhengmiu Xu Guozhe Zhu Ziyu Lu Dong yuan. |
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| Affiliation: | Shanghai Institute of Test Techniques |
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| Abstract: | Fabrication and research of calibration samples for boron ion implantation into silicon are discussed. Depth profile analysis and comparison of samples are separately conducted by three sets of SIMS instruments and main parameters of samples used for calibration are calibrated. |
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| Keywords: | Ion implantation Boron implantation into silicon Sample calibration. |
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