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Grain orientation and electrical properties of Sr2Nb2O7 ceramics
Authors:Mikio Fukuhara  Chi -Yuen Huang  A S Bhalla  R E Newnham
Affiliation:(1) Materials Research Laboratory, The Pennsylvania State University, 16802 University Park, Pennsylvania, USA;(2) Present address: Toshiba Tungaloy 1–7, Tsukagoshi, Saiwal-Ku, 210 Kawasaki, Japan
Abstract:Sr2Nb2O7 ceramics sintered at 1753 K and the hot-pressed compacts annealed at 1073 K possess low density because of the formation of voids by large expansion. The expansion is attributed to cleavage and due to the preferential grain growth along the <010> direction. An increase in dielectric constant at temperatures over 973 K and a parabolic decrease of resistivity with increasing temperature are observed. The constant variation corresponds well to the decrease in thermal strain and the grain orientation factor along the <0K0> direction.
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