| 表面微结构的高响应度Si基近红外光电探测器 |
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| 引用本文： | 唐玉玲,夏少杰,陈俊.表面微结构的高响应度Si基近红外光电探测器[J].红外与毫米波学报,2020,39(4):417-421. |
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| 作者姓名： | 唐玉玲 夏少杰 陈俊 |
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| 作者单位： | 苏州大学电子信息学院,江苏苏州 215006;苏州大学电子信息学院,江苏苏州 215006;苏州大学电子信息学院,江苏苏州 215006 |
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| 基金项目： | 国家自然科学基金 61774108国家自然科学基金(61774108) |
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| 摘 要： | 为了使Si基光电探测器应用到近红外光波段,需要提升其对光的响应度。通过等离子体光刻在硅基光电探测器表面制备规则有序的微结构阵列,另外通过原子层沉积(ALD)在微结构表面生长一层Al_2O_3膜,研究它的抗反射和钝化作用。对比测量器件的表面反射率和I-V特性曲线,并计算器件在808 nm近红外光下的光响应度。通过计算发现器件的响应度由最初的0.063 A/W提高到0.83 A/W。
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| 关 键 词： | Si 光电探测器 微结构 近红外光 响应度 |
| 收稿时间： | 2019/12/8 0:00:00 |
| 修稿时间： | 2020/7/27 0:00:00 |
High responsivity Si-based near-infrared photodetector with surface microstructure |
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| TANG Yu-Ling,XIA Shao-Jie and CHEN Jun.High responsivity Si-based near-infrared photodetector with surface microstructure[J].Journal of Infrared and Millimeter Waves,2020,39(4):417-421. |
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| Authors: | TANG Yu-Ling XIA Shao-Jie and CHEN Jun |
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| Affiliation: | School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China,School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China,School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China |
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| Abstract: | To apply Si-based photodetectors in the near-infrared band and improve their responsivity. A regular and orderly microstructure array was formed on the surface of silicon-based photodetectors by plasma lithography. Besides, an film was grown on the microstructure surface by atomic layer deposition (ALD) to study its anti-reflection and passivation effects. The surface reflectivity and characteristic curves of the device were compared and the light responsivity of the device under 808 near-infrared light was calculated. It is found that the responsivity of the device is increased from 0.063 to 0.83. |
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| Keywords: | Si-based photodetector microstructure near infrared light responsivity |
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