硅基异质集成技术发展趋势与进展

目前主流的异质集成技术有单片异质外延生长、外延层转移和小芯片微米级组装。硅基异质集成主要是指以硅材料为衬底集成异质材料(器件)所形成的集成电路技术。它首先在军用微电子研究中得到重视,并逐渐在民用领域扩展。硅基异质集成技术正处于芯片级集成向晶体管级集成的发展初期,已有关于晶体管级和亚晶体管级集成的报道。本文重点研究了单片三维集成电路(3D SoC)、太赫兹SiGe HBT器件、超高速光互连封装级系统(SiP)、单片集成电磁微系统等硅基异质集成技术前沿,展现了硅基异质集成技术的发展趋势,及其在军用和民用通信、智能传感技术发展中所具有的重要意义。

Trends of Silicon-Based Heterogeneous Integration Technologies

The current mainstream heterogeneous integration technologies include monolithic hetero-epitaxial growth, epitaxial layer transfer and microchip-level assembly. Silicon-based heterogeneous integration mainly refers to the integrated circuit technology formed by integrating heterogeneous materials (devices) with a silicon material as a substrate. It has first gained attention in military microelectronics research, and gradually expanded in the civilian field. Silicon-based heterogeneous integration technology is in the early stages from chip-level integration to transistor-level integration. There have been reports on transistor-level and sub-transistor-level integration. This article focused on the frontiers of silicon-based heterogeneous integration technologies such as monolithic three-dimensional integrated circuits (3D SoCs), terahertz SiGe HBT devices, ultra-high-speed optical interconnect package-level systems (SiP), and monolithic integrated electromagnetic microsystems. It showed the development trend of silicon-based heterogeneous integration technology and its significance in the development of military and civilian communications and intelligent sensing technology.