Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition |
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Authors: | Y J Li Y W Heo J M Erie H Kim K Ip S J Pearton D P Norton |
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Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL |
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Abstract: | The transport and optical properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied.
The carrier type of as-deposited (Zn,Mg)O:P films converts from n-type to p-type with increasing oxygen partial pressure.
All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of oxidation conditions
in realizing p-type (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show a strong dependence on the deposition ambient
at different growth temperatures. The resistivity of the samples deposited in O3/O2 mixture is two orders of magnitude higher than the films grown in oxygen and O2/Ar/H2 mixture. The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O2/Ar/H2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The enhanced ultraviolet
(UV) emission in the films grown in O2/Ar/H2 mixture may result from hydrogen passivation of the deep level emission centers. The annealed ZnO:P films are n-type with
nonlinear dependence of resistivity on annealing temperature. The resistivity increases in the films with annealing at 800°C
while decreasing with further increasing annealing temperature. Strong visible light emission is observed from the ZnO:P films
annealed in oxygen. |
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Keywords: | Wide bandgap semiconductor zinc oxide (Zn Mg)O phosphorus doped pulsed laser deposition |
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