Statistical features of the avalanche multiplication build-up in semiconductors with different coefficients of impact ionization |
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Authors: | A V Verkhovtseva I V Vanyushin V A Gergel’ A P Zelenyi V A Zimoglyad Yu I Tishin |
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Affiliation: | (1) Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ, UK |
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Abstract: | The statistical fluctuations of the efficiency of the avalanche multiplication are studied for the Geiger- mode avalanche
photodiodes. The resulting distribution function of the partial multiplication coefficients is characterized by an anomalously
broad variance (on the order of the mean value). The expressions for the partial feedback coefficients are derived in terms
of the mean gain, and the corresponding dependences on the over-voltage across the diode are calculated. An algorithm for
the Monte-Carlo simulation of the avalanche process is presented, and the results of the statistical tests are compared with
the theoretical dependence. |
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