| 电泳法制备ZnO/SiO2复合薄膜 |
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| 引用本文： | 李忠,石礼伟,薛成山,李玉国.电泳法制备ZnO/SiO2复合薄膜[J].电子元件与材料,2006,25(6):43-45. |
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| 作者姓名： | 李忠 石礼伟 薛成山 李玉国 |
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| 作者单位： | 山东师范大学物理与电子科学学院,山东,济南,250014;山东师范大学物理与电子科学学院,山东,济南,250014;山东师范大学物理与电子科学学院,山东,济南,250014;山东师范大学物理与电子科学学院,山东,济南,250014 |
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| 摘 要： | 用电泳法在硅衬底上沉积了ZnO/SiO2复合薄膜,然后在650℃和950℃退火热处理30 min。测试结果表明,样品经650℃退火后,复合薄膜ZnO和SiO2微晶颗粒集结成块状,结晶程度较高,颗粒尺寸较大,不连续的散落在硅衬底上。经950℃退火后,其中ZnO和SiO2发生反应生成少量的ZnSiO4微晶颗粒,使复合薄膜在室温下的绿色发光强度有所增加。
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| 关 键 词： | 电子技术 电泳法 复合薄膜 光致发光 |
| 文章编号： | 1001-2028（2006）06-0043-03 |
| 收稿时间： | 2006-01-13 |
| 修稿时间： | 2006-01-13 |
ZnO/SiO2 Composite Thin Films Deposited by Electrophoresis |
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| LI Zhong,SHI Li-wei,XUE Cheng-shan,LI Yu-guo.ZnO/SiO2 Composite Thin Films Deposited by Electrophoresis[J].Electronic Components & Materials,2006,25(6):43-45. |
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| Authors: | LI Zhong SHI Li-wei XUE Cheng-shan LI Yu-guo |
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| Affiliation: | College of Physics and Electronics, Shandong Normal University, Jinan 250014, China |
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| Abstract: | ZnO/SiO2 composite thin films were deposited on Si substrates by electrophoretic method,then annealed at 650℃ and 95 0 ℃ for 30 min,respectively.The results show that ZnO and Si O2 microcrystalline particles in films annealed at 650℃ agglomerated,with larger particle size and higher crystallization degree,and dispersed on Si substrates.After annealing at 950 ℃,a small amount of ZnSi O4 is produced,which enhances the green emission of the composite thin films at room temperature. |
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| Keywords: | electronic technology electrophoresis composite film photoluminescence |
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