| GaAlAs/ GaAs 半导体功率放大激光器的研究 |
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| 引用本文： | 杨晓妍 杨 琏 朱明方 刘 杰 任大翠. GaAlAs/ GaAs 半导体功率放大激光器的研究[J]. 激光与红外, 2003, 33(6): 428-429 |
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| 作者姓名： | 杨晓妍 杨 琏 朱明方 刘 杰 任大翠 |
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| 作者单位： | 1. 长春理工大学,吉林,长春,130022
2. 吉林大学,吉林,长春,130022 |
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| 摘 要： | 研究一种GaAlAs／GaAs材料的高功率半导体功率放大激光器(LD—SLA)。器件为双异质结增异导引氧化物条形结构。采用直接耦合方式将半导体激光器(LD)与半导体功率放大器(SLA)集成一体，使单管芯输出光功率提高一个数量级。并在器件端面镀高反射膜和增透膜，使器件端面的反射率和透射率由不镀膜时的29％、71％提高到90％以上，进一步提高激光输出。保护器件端面、提高器件使用寿命。
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| 关 键 词： | 半导体功率放大激光器 GaAlAs／GaAs 直接耦合 谐振腔 |
| 文章编号： | 1001-5078(2003)06-0428-02 |
| 修稿时间： | 2003-09-04 |
Study on the GaAlAs/GaAs Laser with Semiconductor Power Amplification |
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| YANG Xiao-yan,YANG Lian,ZHU Ming-fang,LIU Jie,REN Da-cui. Study on the GaAlAs/GaAs Laser with Semiconductor Power Amplification[J]. Laser & Infrared, 2003, 33(6): 428-429 |
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| Authors: | YANG Xiao-yan YANG Lian ZHU Ming-fang LIU Jie REN Da-cui |
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| Affiliation: | YANG Xiao-yan~1,YANG Lian~1,ZHU Ming-fang~2,LIU Jie~2,REN Da-cui~1 |
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| Abstract: | A novel high power LD-SLA of GaAlAs/GaAs maerial has been studied.Device is DHL structure of gain-guide and oxide-strripe.It uses direct coupling of the LD with the SLA.Output power has been amplified an order.High reflecting coatings and anti-reflective on the cavity surface of LD-SLA.The transmission coefficent and reflective coefficient have been changed respectively from 71% and 29%,in the case of without coatings,to above 90%.By this,the device cavity surface have been protected,the output power increased. |
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| Keywords: | high power LD semiconductor Power amplificative laser resonant cavities |
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