TDDB improvement by optimized processes on metal-insulator-silicon capacitors with atomic layer deposition of Al_2O_3 and multi layers of TiN film structure |
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| Authors: | Peng Kun Wang Biao Xiao Deyuan Qiu Shengfen Lin D C Wu Ping Yang S F |
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| Affiliation: | 1 School of Economics & Management;Southwest Jiaotong University;Chengdu 610031;China;2 School of Mechanical and Electric;Kunming University of Science and Technology;Kunming 650093;China;3 Semiconductor Manufacturing International Corporation;Shanghai 201203;China |
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| Abstract: | A metal-insulator-silicon (MIS) capacitor with hemi-spherical grained poly atomic layer deposition (ALD) deposited Al2O3 and multi-layered chemical vapor deposition (CVD) TiN structure is fabricated. The impact of the deposition process and post treatment condition on the MIS capacitor's time-dependent dielectric breakdown (TDDB) performance is also studied. With an optimized process, it is confirmed by Auger electron spectroscopy and secondary ion mass spectrometry analysis that the Al(CH3)3/O3-based ALD A... |
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| Keywords: | atomic layer deposition Al2O3 multi-layer TiN early failure metal insulator silicon capacitors TDDB |
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