| Abstract: | The influence of additive amount of CeO2 on the properties of Ba(Ti, Zr)O3 (BTZ) capacitor ceramics prepared using conventional solid-state reaction method was investigated. The dielectric constant(ε) increases to a maximum when w( CeO2 ) is about 1.0% and then decreases again at higher doping concentration of CeO2. The dielectric constant gets a maximum while w ( CeO2 ) is about 1. 0%, and the dielectric loss is minimum while w ( CeO2 ) is0.5 %. CeO2 can decrease the curie temperature, widen the εr-T peak and decrease the absolute value of dielectric constant temperature coefficient. The influence mechanism of CeO2 additive on the properties of the BTZ ceramics was discussed. The results show that CeO2 additive influences the properties of BTZ ceramics by means of forming defect solid solution , shifting curie temperature peak effect, segregating in crystal boundary , and impeding grain growth. |
