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GaAs 50 GHz Schottky-barrier IMPATT diodes |
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| Authors: | Watanabe T. Kodera H. Migitaka M. |
| Affiliation: | Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan; |
| Abstract: | Technological improvements have been made to realise high-efficiency GaAs Schottky-barrier IMPATT diodes in the 50 GHz band. Efficiency and output power have been increased by a factor of 1.5 over previous best results. Efficiency as high as 11.0% at 51 GHz and an output power of 420 mW at 53 GHz have been obtained. |
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