A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects |
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| Authors: | JP Xu YP Li PT Lai WB Chen SG Xu JG Guan |
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| Affiliation: | aDepartment of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, PR China;bDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong;cState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China |
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| Abstract: | A threshold condition different from the classical one is proposed for MOSFET with quantum effects, and is based on self-consistent numerical solution of the Schrödinger’s and Poisson’s equations. Furthermore, an accurate 1D threshold-voltage model including polysilicon-depletion effects is built by experimental fitting. Simulated results exhibit good agreement with measurement data. Based on this 1D model, a 2D quantum-modified threshold-voltage model for small MOSFET is developed by solving the quasi-2D Poisson’s equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for deep-submicron MOSFET with high-k gate-dielectric and reasonable design of device parameters. |
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