| 气相沉积BN膜的性能及形成机制的研究 |
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| 引用本文： | 张晓玲,胡奈赛,何家文. 气相沉积BN膜的性能及形成机制的研究[J]. 硅酸盐学报, 1999, 27(3): 293-297 |
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| 作者姓名： | 张晓玲 胡奈赛 何家文 |
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| 作者单位： | 西安交通大学金属材料强度国家重点实验室 |
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| 摘 要： | 用射频等离子体辅助化学气相沉积技术制备了ＢＮ膜，对以Ａｒ＋１０％Ｈ２（体系分数），Ｈ２和Ｎ２气为载气沉积的膜，进行了ＦＴＩＲ，ＴＥＭ，ＳＥＭ等分析，比较了不同载气下膜层的立方氮化硼含量，膜基结合力，膜层残余应力，硬度和耐磨性，对立方氮化硼的形成机制进行了探讨。
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| 关 键 词： | 立方氮化硼膜 射频等离子体辅助化学气相沉积 载气 |
STUDY ON THE PROPERTIES AND FORMATION MECHANISM OF BN FILMS DEPOSITED BY R F PCVD |
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| Zhang Xiaoling,Hu Naisai,He Jiawen. STUDY ON THE PROPERTIES AND FORMATION MECHANISM OF BN FILMS DEPOSITED BY R F PCVD[J]. Journal of The Chinese Ceramic Society, 1999, 27(3): 293-297 |
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| Authors: | Zhang Xiaoling Hu Naisai He Jiawen |
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| Abstract: | Boron nitride (BN) films were deposited by r f plasma_assisted CVD technique, with nitrogen(N2),hydrogen (H2) or 10% (in volume) of H2 diluted in argon (Ar) as carrier gas. FTIR, TEM, SEM and nano_indentation tests etc, have been carried out to compare the c-BN content, film thickness, bonding strength, residual stress, nano_hardness and wear properties of the films. The formation process of the films was also studied. |
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| Keywords: | cubic boron nitride films radio frequency plasma chemical vapor deposition carrier gas |
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